Search results for "Nb [TiO2]"
showing 5 items of 5 documents
Behaviour of Nb2O5/PPy contacts: From Schottky barriers to p-n junctions
2009
In this work, a study of the photoelectrochemical responses of Nb O /PPy contacts fabricated in both organic 2 5 and aqueous solutions is performed. From the comparison between the experimental data of PPy photodeposited on Nb O in organic and in aqueous solutions, it is evident that the medium used for the photodeposition 2 5 influences the absorption coefficient, the band gap and flat band potential values.
Influence of Nb-doping on the local structure and thermoelectric properties of transparent TiO2:Nb thin films
2020
The experiment at HASYLAB/DESY was performed within the project I-20180036 EC. The research leading to this result has been supported by the project CALIPSOplus under the Grant Agreement 730872 from the EU Framework Programme for Research and Innovation HORIZON 2020. Filipe Correia is grateful to the Fundação para a Ciência e Tecnologia (FCT, Portugal) for the Ph.D. Grant SFRH/BD/111720/2015 . Joana Ribeiro is grateful to the Project WinPSC - POCI-01-0247-FEDER-017796, for the research grant, co-funded by the European Regional Development Fund (ERDF) , through the Operational Programme for Competitiveness and Internationalisation (COMPETE 2020), under the PORTUGAL 2020 Partnership Agreement…
The Effect of Nb Incorporation on the Electronic Properties of Anodic HfO2
2017
Hafnium oxide and Nb doped HfO2 were grown by anodizing sputtering-deposited Hf and Hf-4at.%Nb. Photoelectrochemical characterization was carried out in order to estimate solid state properties such as band gap, flat band potential and electrons internal photoemission threshold energy as a function of thickness and composition of anodic oxides. Optical transitions at energy lower than the band gap value of the investigated anodic films were evidenced, and they are attributed to optical transitions involving localized states inside the band gap. Such states were located at 3.6 eV and 3.9 eV below the conduction band edge for the Nb free and Nb containing hafnium oxide, respectively. Impedanc…
Electrochemically prepared oxides for resistive switching devices
2018
Redox-based resistive switching memories (ReRAM) based on metal oxides are considered as the next generation non-volatile memories and building units for neuromorphic computing. Using different deposition techniques results however in different structural and electric properties, modulating the device performance. In this study HfO2 and Nb2O5 were prepared electrochemically by anodizing sputtering-deposited Hf and Nb in borate buffer solution. Photoelectrochemical measurements were used to study the solid state properties of the anodic oxides, such as band gap and flat band potential. In the case of anodic HfO2, detected photocurrent is ascribed to optical transitions between localized (gen…
The Effect of Anodizing Bath Composition on the Electronic Properties of Anodic Ta-Nb Mixed Oxides
2022
Anodic oxides were grown to 50 V on Ta-Nb sputtering deposited alloys, with high Nb content, in acetate ions containing an aqueous solution to study the effect of the anodizing bath composition on anodic layers’ dielectric properties. Photoelectrochemical measurements proved the presence of a photocurrent in the band gap of photon energy lower than oxides, due to optical transitions involving localized electronic states as a consequence of acetate ions incorporation. Flat band potential value estimates assessed the insulating nature of the anodic oxides grown in the acetate buffer solution. Differential capacitance measurements showed that the highest capacitance value was measured for the …